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STP80NF12
N-channel 120V - 0.013 - 80A - TO-220 STripFETTM II Power MOSFET
General features
Type STP80NF12

VDSS (@Tjmax) 120V
RDS(on) <0.018
ID 80A (1)
Exceptional dv/dt capability 100% avalanche tested Application oriented characterization
TO-220
3 1 2
Description
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP80NF12 Marking P80NF12 Package TO-220 Packaging Tube
January 2007
Rev 4
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Contents
STP80NF12
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STP80NF12
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID
(1)
Absolute maximum ratings
Value Parameter STB_P_W80NF12 STP80NF12FP Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 80 60 320 300 2.0 10 --55 to 175 2500 120 120 22 11 (2) 60 (2) 320 (2) 45 0.3 V V V A A A W W/C V/ns V C Unit
ID IDM(3) PTOT dv/dt(4) VISO TJ Tstg
Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature
1. Limited by Package 2. Limited only by maximum temperature allowed 3. Pulse width limited by safe operating area 4. Starting TJ = 25 oC, ID = 40A, VDD = 45V
Table 2.
Thermal data
Value
Symbol
Parameter TO-247
D2PAK TO-220 0.5 62.5 300
Unit TO-220FP 3.33 62.5 300 C/W C/W C
RthJC RthJA Tl
Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose
0.5 50 300
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Electrical characteristics
STP80NF12
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 40A 2 0.013 0.018 Min. 120 1 10 100 Typ. Max. Unit V A A nA V
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15V, ID = 40A Min. Typ. 80 4300 600 230 140 23 51 189 Max. Unit S pF pF pF nC nC nC
VDS =25V, f=1 MHz, VGS=0
VDD = 80V, ID = 80A VGS =10V
1. Pulsed: pulse duration=300s, duty cycle 1.5%
Table 5.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 50 V, ID= 40A, RG=4.7, VGS=10V Figure 13 on page 8 Min. Typ. 40 145 134 115 Max. Unit ns ns ns ns
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STP80NF12
Electrical characteristics
Table 6.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, VGS=0 ISD=80A, di/dt = 100A/s, VDD=35V, TJ = 150C 155 0.85 11 Test conditions Min. Typ. Max 80 320 1.3 Unit A A V ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STP80NF12
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STP80NF12 Figure 7. Gate charge vs. gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs. temperature
Figure 10. Normalized on resistance vs. temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Normalized BVDSS vs. temperature
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Test circuit
STP80NF12
3
Test circuit
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
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STP80NF12
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STP80NF12
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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STP80NF12
Revision history
5
Revision history
Table 7.
Date 21-Jun-2004 24-Jul-2006 31-Jan-2007
Revision history
Revision 2 3 4 Preliminary version The document has been reformatted, SOA updated Typo mistake on Table 1. Changes
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STP80NF12
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